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Basic Digital Logic Gate Design using Carbon Nanotube Field Effect Transistors

Published on June 2014 by Y. Srinivasa Rao, Ram Babu. Busi
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International Conference and workshop on Advanced Computing 2014
Foundation of Computer Science USA
ICWAC2014 - Number 1
June 2014
Authors: Y. Srinivasa Rao, Ram Babu. Busi
c52bf9ad-e6d4-4a35-aa2f-ec79381bacad

Y. Srinivasa Rao, Ram Babu. Busi . Basic Digital Logic Gate Design using Carbon Nanotube Field Effect Transistors. International Conference and workshop on Advanced Computing 2014. ICWAC2014, 1 (June 2014), 0-0.

@article{
author = { Y. Srinivasa Rao, Ram Babu. Busi },
title = { Basic Digital Logic Gate Design using Carbon Nanotube Field Effect Transistors },
journal = { International Conference and workshop on Advanced Computing 2014 },
issue_date = { June 2014 },
volume = { ICWAC2014 },
number = { 1 },
month = { June },
year = { 2014 },
issn = 2249-0868,
pages = { 0-0 },
numpages = 1,
url = { /proceedings/icwac2014/number1/639-1401/ },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Proceeding Article
%1 International Conference and workshop on Advanced Computing 2014
%A Y. Srinivasa Rao
%A Ram Babu. Busi
%T Basic Digital Logic Gate Design using Carbon Nanotube Field Effect Transistors
%J International Conference and workshop on Advanced Computing 2014
%@ 2249-0868
%V ICWAC2014
%N 1
%P 0-0
%D 2014
%I International Journal of Applied Information Systems
Abstract

In this paper, the performance of ambipolar carbon nanotube field effect transistor based logic devices have been evaluated using circuit compatible HSPICE model. The expression for drain current has been derived in terms of surface potential, specific voltage ?i(S/D), subband minima, source / drain Fermi levels and gate voltage. The PDP and EDP of basic carbon nanotube field effect transistor based logic devices have been investigated based on this HSPICE model.

References
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Index Terms

Computer Science
Information Sciences

Keywords

Carbon NanotubesCNT) HSPICE Ambipolarity CNTFET.